Non-volatile semiconductor memory device reading and writing...

Details Non-volatile semiconductor memory device reading and writing... Non-volatile semiconductor memory device reading and writing...

Filed on

2005-12-29

Date issued

2008-12-16

Examiner

Tran, Andrew Q (Department: 2824)

Patent Class

Static information storage and retrieval

SubClass

Floating gate

SubSubClass

Particular biasing

Other Related Categories

C365S185030, C365S185200, C365S185220, C365S185170, C365S185110

Type

Reexamination Certificate

Status

active

Patent number

07466593

Description

ABSTRACT:
A non-volatile semiconductor memory device includes: a memory cell array in which a plurality of electrically rewritable and non-volatile memory cells are arranged; a sense amplifier circuit configured to write M-value data (where, M is an integer equal to 4 or more) to pair-cells each constituted by simultaneously selected first and second memory cells connected to a pair of bit lines in the memory cell array, the M-value data being defined as a combination of different threshold levels of the first and second memory cells in M threshold levels to be set at each memory cell, and the M-value data stored in each pair-cell being read by sensing a difference between cell currents of the first and second memory cells; and a controller configured to control data write and read operations for the memory cell array.

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