Magnetic tunnel junction with in stack biasing layer...

Details Magnetic tunnel junction with in stack biasing layer... Magnetic tunnel junction with in stack biasing layer...

Filed on

2004-08-31

Date issued

2008-11-04

Examiner

Heinz, A. J. (Department: 2627)

Patent Class

Dynamic magnetic information storage or retrieval

SubClass

Head

SubSubClass

Magnetoresistive reproducing head

Other Related Categories

C360S324110

Type

Reexamination Certificate

Status

active

Patent number

07446986

Description

ABSTRACT:
A magnetoresistive sensor having an in stack bias structure. The sensor includes a bias spacer that allows biasing of free layer magnetic moment in a direction orthogonal to the magnetic moment of the biasing layer.

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IPCOM15941D “Resettable Instack Bias Using Direct Ferromagnetic/Antiferromagnetic Coupling,” Abstract, Jun. 21, 2003.
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S. Maat and B.A. Gurney, “Perpendicular Coupling Mediated Through Introduction of a Spin-Flop Layer,” White Paper, IBM Almaden Research Center, San Jose, CA 95120.

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