Semiconductor memory device of single-bit-line drive type

Details Semiconductor memory device of single-bit-line drive type Semiconductor memory device of single-bit-line drive type

2006-10-05

2008-12-02

Nguyen, Dang T (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S189090

Reexamination Certificate

active

07460408

ABSTRACT:
A semiconductor memory device includes a plurality of word lines, first and second bit lines, a plurality of memory cells which are connected to the first and second bit lines, a differential amplifier which is connected to one end of the first bit line and one end of the second bit line, a reference-current generating circuit which is connected to the other end of the second bit line and which generates a reference-current smaller than the cell current of the memory cells, and a dummy word line which is connected to the reference-current generating circuit, to activate the reference-current generating circuit in order to read data.

REFERENCES:
patent: 2005/0232058 (2005-10-01), Yabe
patent: 2007/0025140 (2007-02-01), Redwine
patent: 2007/0194833 (2007-08-01), Takeyama et al.
Kevin Zhang, et al., “The Scaling of Data Sensing Schemes for High Speed Cache Design in Sub-0. 18μm Technologies”, 2000 Symposium on VLSI Circuits Digest of Technical Papers, IEEE, Jan. 2000, pp. 226-227.

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