Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2005-06-10
2008-12-30
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S040000, C257S094000, C257S096000
Reexamination Certificate
active
07470933
ABSTRACT:
An organic light emitting display device may include: a substrate having first, second and third pixel regions. A first electrode layer may be formed in each of the first, second and third pixel regions on the substrate. A hole injection layer may be formed over an entire surface of the substrate on the first electrode layers. A first hole transport layer may be formed on the first electrode layers in the first, second and third pixel region. A second hole transport layer may be formed on the first hole transport layer in any two adjacent pixel regions among the first, second and third pixel regions. A third hole transport layer may be formed on the second hole transport layer in any one of the two adjacent pixel region. A first, second and third organic emission layers may be formed on the first, second and third hole transport layer. A second electrode layer may be formed on the first, second and third organic emission layers. An OLED configured in this or a similar manner benefits from uniform operating characteristics and reducing tac time.
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Kwon Jang-Hyuk
Lee Kwan-Hee
Ryu Seoung-Yoon
H.C. Park & Associates PLC
Hu Shouxiang
Samsung SDI & Co., Ltd.
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