Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-10-06
2008-11-11
Tran, Andrew Q (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180
Reexamination Certificate
active
07450429
ABSTRACT:
A charge pump is configured to receive an external voltage level and generate a high voltage level, wherein the high voltage level is higher than the external voltage level. A memory control circuit is configured to receive the external voltage level and the high voltage level, and to select one of the voltage levels. A memory array, with a word line and a bit line, is configured to receive the external and high voltage levels at the word line and the high voltage levels at the bit line. A word line driver is configured to provide the external and high voltage levels to the word line. A bit line selector is configured to select the bit line and receive the high, external, and regulated voltage levels. A bit line driver is configured to provide the external voltage levels to the bit line selector.
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Corresponding European Patent Application No. 05729910.9, European Supplementary Search Report, Apr. 4, 2007, pp. 1-3.
Atmel Corporation
Schwegman Lundberg & Woessner, P.A.
Tran Andrew Q
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