Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-01-22
2008-12-23
Pham, Ly D (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S185220
Reexamination Certificate
active
07468921
ABSTRACT:
Non-volatile storage elements are programmed using counter-transitioning waveform portions on neighboring word lines which reduce capacitive coupling to a selected word line. In one approach, the waveform portions extend between pass or isolation voltages of a boosting mode, which are applied during a programming pulse on the selected word line, and read voltages, which are applied when verify pulses are applied to the selected word line to verify whether the storage elements have been programmed to a desired programming state. The waveform portions reduce the net voltage change which is coupled to the selected word line. The selected word line can reach a reduced, steady state level sooner so that the verify pulses can be applied sooner, thus reducing the overall programming time.
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Pham Ly D
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
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