Semiconductor device using SiC as supporter of a semiconductor e

Details Semiconductor device using SiC as supporter of a semiconductor e Semiconductor device using SiC as supporter of a semiconductor e

1980-04-22

1982-09-28

James, Andrew J.

357 68, 357 65, 357 80, 357 75, H01L 2302, H01L 2348, H01L 2944

Patent

active

043521207

ABSTRACT:
In a semiconductor device, an active element is mounted on a supporter made of silicon carbide SiC. Since the thermal expansion coefficient of SiC is nearly equal to that of the semiconductor element, the integration of the element and the supporter will not give rise to thermal stresses in the element. Since silicon carbide has high degrees of thermal dissipation and conduction, the supporter of SiC can effectively dissipate heat generated in the semiconductor element. And since SiC has a high electrical conductivity and a high mechanical strength and is also light, it can be used as electrodes for the semiconductor element.

REFERENCES:
patent: 3389022 (1968-06-01), Kravitz
patent: 3423651 (1969-01-01), Legat et al.
patent: 3549432 (1970-12-01), Sivertsen
patent: 3588632 (1971-06-01), Nakata
patent: 3602777 (1971-08-01), Berman
patent: 3714520 (1973-01-01), Engeler et al.
patent: 3745072 (1973-07-01), Scott

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