Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2007-06-18
2008-10-07
Pham, Ly D (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185020, C365S185180, C365S185230, C365S185280, C365S185290
Reexamination Certificate
active
07433233
ABSTRACT:
An exemplary NAND string memory array provides for capacitive boosting of a half-selected memory cell channel to reduce program disturb effects of the half selected cell. To reduce the effect of leakage current degradation of the boosted level, multiple programming pulses of a shorter duration are employed to limit the time period during which such leakage currents may degrade the voltage within the unselected NAND strings. In addition, multiple series select devices at one or both ends of each NAND string further ensure reduced leakage through such select devices, for both unselected and selected NAND strings. In certain exemplary embodiments, a memory array includes series-connected NAND strings of memory cell transistors having a charge storage dielectric, and includes more than one plane of memory cells formed above a substrate.
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Chen En-Hsing
Fasoli Luca G.
Ilkbahar Alper
Nallamothu Sucheta
Scheuerlein Roy E.
Pham Ly D
SanDisk 3D LLC
Zagorin O'Brien Graham LLP
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