Semiconductor device manufacturing: process – Having organic semiconductive component
Reexamination Certificate
2005-04-25
2008-10-28
Nguyen, Ha (Department: 4122)
Semiconductor device manufacturing: process
Having organic semiconductive component
Reexamination Certificate
active
07442574
ABSTRACT:
An organic semiconductor device is provided. The device has a first electrode and a second electrode, with an organic semiconductor layer disposed between the first and second electrodes. An electrically conductive grid is disposed within the organic semiconductor layer, which has openings in which the organic semiconductor layer is present. At least one insulating layer may be disposed adjacent to the electrically conductive grid, preferably such that the electrically conductive grid is completely separated from the organic semiconductor layer by the insulating layer. Methods of fabricating the device, and the electrically conductive grid in particular, are also provided.
REFERENCES:
patent: 4149904 (1979-04-01), Jones
patent: 4399605 (1983-08-01), Dash et al.
patent: 4586240 (1986-05-01), Blackstone et al.
patent: 4713676 (1987-12-01), Thim
patent: 4740266 (1988-04-01), Wu
patent: 5172385 (1992-12-01), Forrest et al.
patent: 5276380 (1994-01-01), Tang
patent: 5294869 (1994-03-01), Tang et al.
patent: 5294870 (1994-03-01), Tang et al.
patent: 5315129 (1994-05-01), Forrest et al.
patent: 5315219 (1994-05-01), Kishi
patent: 5411426 (1995-05-01), Boysel
patent: 5510156 (1996-04-01), Zhao
patent: 5512131 (1996-04-01), Kumar et al.
patent: 5563424 (1996-10-01), Yang et al.
patent: 5588894 (1996-12-01), Jin et al.
patent: 5681196 (1997-10-01), Jin et al.
patent: 5703436 (1997-12-01), Forrest et al.
patent: 5707745 (1998-01-01), Forrest et al.
patent: 5772905 (1998-06-01), Chou
patent: 5811833 (1998-09-01), Thompson
patent: 5861219 (1999-01-01), Thompson et al.
patent: 5865657 (1999-02-01), Haven et al.
patent: 5865659 (1999-02-01), Ludwig et al.
patent: 5925259 (1999-07-01), Biebuyck et al.
patent: 5998803 (1999-12-01), Forrest et al.
patent: 6019658 (2000-02-01), Ludwig et al.
patent: 6048630 (2000-04-01), Burrows et al.
patent: 6228698 (2001-05-01), Luo
patent: 0 977 280 (2000-02-01), None
Yang, Y. and Heeger, A. J., A New Architecture for Polymer Transistors, Nov. 24, 1994, Nature, vol. 372, pp. 344-346.
Murray A. Lampert, et al.,Current Injection in Solids, Academic Press, NY, 1970, pp. 44-83.
Kudo et al., “Organic Static Induction Transistor for Display Devices”,Synthetic Metals, 111:11-14, Jun. 1, 2000.
Kudo et al., “Organic Static Induction Transistor for Color Sensors”,Synthetic Metals, 102:(1-3) 900-903, Jun. 1999.
C.C. Wu, et al.,Appl. Phys. Lett., “Surface Modification of Indium Tin Oxide by Plasma Treatment: An Effective Method to Improve the Efficiency, Brightness, and Reliability of Organic Light Emitting Devices,” Mar. 17, 1997, vol. 70, No. 11, pp. 1348-1350.
P.E. Burrows, et al.,Appl. Phys. Lett., “Color-tunable Organic Light-Emitting Devices,” Nov. 11, 1996, vol. 69, No. 20, pp. 2959-2961.
Zilan Shen, et al.,Science, “Three-Color, Tunable, Organic Light-Emitting Devices,” Jun. 27, 1997, vol. 276, pp. 2009-2011.
P.E. Burrows, et al., “Control of Microcavity Effects in Full Color Stacked Organic Light Emitting Devices,” pp. 1-11, 1998 Appl. Phys. Lett vol. 73 No. 435.
John C.C. Fan, et al.,Journal of Applied Physics, “X-ray Photoemission Spectroscopy Studies of Sn-doped Indium-Oxide Films,” Aug. 1997, vol. 48, No. 8, pp. 3524-3531.
Sze, S.M. and Gummel, H.K. “Appraisal of Semiconductor-metal-Semiconductor Transistor”Solid-State Electronics. Pergamon Press, New York. 1966. vol. 9, pp. 751-769.
Crowell, C.R. and Size, S.M. Quantum-Mechanical Reflection of Electrons at Metal-Semiconductor Barriers: Electron Transport in Semiconductor-Metal-Semiconductor Structures.Journal of Applied Physics. Jun. 1966. vol. 37, No. 7, pp. 2683-2689.
Kawai, Satoshi and Ueda, Ryuzo “Amagnetic Properties of Anodic Oxide Coatings on Aluminum Containing Electrodeposited Co and Co-Ni”Journal of the Electrochemical Society, Jan. 1975. vol. 122, No. 1, pp. 32-36.
Chang, L.L. and Esaki, L., “Tunnel triode—a tunneling base transistor”Applied Physics Letters. Jul.-Dec. 1977. vol. 31, pp. 687-689.
Forrest, S.R. and Witten, Jr., T.A., “Long-renge correlation in smoke-particle aggregates”.Journal of Physics A: Mathematical and General. May 1979. vol. 12, No. 5, pp. L109-L117.
Rosencher, E., et al. “Realization and Electrical Properties of a Monolithic Metal-Base Transistor: The Si/CoSi2/Si Structure”Physica B+C Europhysics Journal. 1985. vol. B+C, pp. 106-110.
Luryi, Serge. “Hot-electron Transport in Heterstructure Devices”Physica B+C Europhysics Journal. 1985. vol. B+C, pp. 453-465.
Saito, M., et al. “Micropolarizer made of the anodized alumina film.”Applied Physics Letters. Aug. 14, 1989. vol. 55, No. 7, pp. 607-609.
Tonucci, R.J. et al. “Nanochannel Array Glass.”Science. Oct. 30, 1992. vol. 258, pp. 783-785.
Huber, C.A.. et al. “Nanowire Array Composites.”Science. Feb. 11, 1994. vol. 263, pp. 800-802.
Widawski, Gene, et al. “Self-organized honeycomb morphology of star-polymer polystyrene films.”Nature : International Weekly Journal of Science. Jun. 2, 1994. vol. 369, No. 6479, pp. 387-389.
Masuda, Hideki and Fukuda, Kenji “Ordered Metal Nanohole Arrays Made By a Two-step Replication of Honeycomb structures of Anodic Alumina.”Science. Jun. 9, 1995. vol. 268, pp. 1466-1468.
Burrows, P.E., et al. “Relationship between electroluminescence and current transport in organic heterojunction light-emitting devices”.Journal of Applied Physics. May 15, 1996. vol. 79, No. 10, pp. 7991-8006.
Routkevitch, Dmitri, et al. “Nonlithographic Nano-Wire Arrays: Fabrication, Physics, and Device Applications.”IEEE Transactions on Electron Devices. Jul. 1996. vol. 43, No. 7, pp. 1646-1658.
Bao, Zhenan et al. “High-Performance Plastic Transistors Fabricated by Printing Techniques.”Chemistry of Materials. 1997, vol. 9, No. 6, pp. 1299-1301.
Lin, Ten-Yi, et al. “Pentacene-Based Organic Thin-film Transistors.”IEEE Transactions on Electron Devices. Aug. 1998. vol. 44 No. 8, pp. 1325-1331.
Berggren, M., et al. “Organic solid-state lasers with imprinted gratings on plastic substrates.”Applied Physics Letters. Jan. 26, 1998. vol. 72, No. 4, pp. 410-411.
Klauk, Hagen, et al. “Fast Organic Thin-Film Transistor Circuits.”IEEE Electron Device Letters. Jun. 1999. vol. 20, No. 6, pp. 289-291.
Kim, C., et al., “Micropatterning of Organic Electronic Devices by Cold-Welding.”Science. May 5, 2000, vol. 288, pp. 831-833.
Yang, et al., “A new architecture for polymer transistors,” Letters to Nature, vol. 372 pp. 344-346 (Nov. 24, 1994).
McElvain, et al., “An analytic model for the polymer grid triode,” J. App. Phys. 80(8) p. 4755-4766 (Oct. 15, 1996).
McElvain, et al., “Fullerene-based polymer grid triodes,” J. App. Phys., 81(9) pp. 6468-6472 (May 1, 1997).
Kudo, et al., “Schottky gate static induction transistor using copper phthalocyanine films,” Thin Solid Films, 331 (1998) pp. 51-54.
Wang, et al., “Device Characteristics of Organic Static Induction Transistor Using Copper Phthalocyanine Films and Al Gate Electrode,” Jpn. J. Appl. Phys., vol. 38 (1999) Pt. 1, No. 1A pp. 256-259.
Gewartowski, “Principles of Electron Tubes,” Chapter 5, pp. 149-182, Princeton, NJ, 1965.
Baldo Marc
Forrest Stephen
Kim Changsoon
Peumans Peter
Brown Valerie
Kenyon & Kenyon LLP
Nguyen Ha
The Trustees of Princeton University
LandOfFree
Organic triodes with novel grid structures and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Organic triodes with novel grid structures and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Organic triodes with novel grid structures and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4017465