Mask substrate manufacturing methods

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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378 35, 430296, G03F 900

Patent

active

059120959

ABSTRACT:
Methods for manufacturing mask substrates usable to make masks for use with charged particle beam or X-ray microlithography. Such masks have supports that are formed to have a minimum required width. The method involves forming a planar laminate of a membrane layer (destined to be the membrane of the mask), an etch-stopper layer, and a support-forming silicon layer. An etch-resistant layer is applied to the silicon layer, and a support-defining pattern is imposed on the etch-resistant layer by, e.g., a microlithographic technique. The resulting exposed portions of the silicon layer are removed by anisotropic dry etching (preferably plasma-enhanced dry etching at extremely low temperature or in the presence of a side-wall protective gas). The dry etching continues until the etch-stopper layer is reached. The resulting mask substrate has well defined supports with side walls perpendicular to the plane of the membrane.

REFERENCES:
patent: 5096791 (1992-03-01), Yahalom
patent: 5115456 (1992-05-01), Kimura et al.
patent: 5178977 (1993-01-01), Yamada et al.
patent: 5798194 (1998-08-01), Nakasuji et al.

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