Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2006-03-08
2008-08-05
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S292000, C257S431000, C257S466000, C257SE27062, C257SE27108, C257S462000
Reexamination Certificate
active
07408210
ABSTRACT:
An object of the present invention is to simultaneously realize the enlargement of a dynamic range and the downsizing of a pixel. An additional capacitor CS is composed by using: a first capacitor formed of a first diffusion layer, a second diffusion layer and a P well by layering the P well, the first diffusion layer, a first dielectric film, a first polysilicon layer, a second dielectric film and a second polysilicon layer; a second capacitor formed of the second diffusion layer, the first polysilicon layer and the first dielectric film; and a third capacitor formed of the first polysilicon layers, a second polysilicon layer, and a second dielectric film. Thereby, the additional capacitor CS for accumulating carriers overflown from a photodiode PD can secure a required capacitance value while making its size as small as possible.
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Sugawa, S. et al., “A 100dB Dynamic Range CMOS Image Sensor Using a Lateral Overflow Integration Capacitor”, 2005 IEE International Solid-State Circuits Conference, pp. 352, 353 and 603 (Feb. 8, 2005).
Itano Tetsuya
Kikuchi Shin
Koizumi Toru
Ogura Masanori
Okita Akira
Armand Marc
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Louie Wai-Sing
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