Methods of processing a semiconductor substrate

Details Methods of processing a semiconductor substrate Methods of processing a semiconductor substrate

2006-07-20

2008-10-07

Everhart, Caridad M (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C257SE21024, C257SE21033, C438S736000

Reexamination Certificate

active

07432212

ABSTRACT:
The invention includes methods of processing semiconductor substrates. In one implementation, a semiconductor substrate is provided which has an outer surface. Such surface has a peripheral region received about a peripheral edge of the semiconductor substrate. A layer comprising amorphous carbon is provided over the substrate outer surface. A masking layer is provided outwardly of the amorphous carbon-comprising layer. A resist layer is provided outwardly of the masking layer. At least a portion of the peripheral region of the outer surface includes the amorphous carbon-comprising layer and the resist layer, but is substantially void of the masking layer. The amorphous carbon-comprising layer is patterned using the resist layer and the masking layer effective to form a mask over the semiconductor substrate. After the patterning, the semiconductor substrate is processed inwardly of the mask through openings formed in the mask.

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PCT/US2004/026517; filed Aug. 22, 2004; International Search Report; 4 pps.
PCT/US04/026517; filed Aug. 2004; Written Opinion: 6 pps.

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