Method for producing silicon single crystals and silicon...

Details Method for producing silicon single crystals and silicon... Method for producing silicon single crystals and silicon...

2006-04-19

2008-10-28

Kunemund, Robert M (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S015000, C117S017000, C117S023000, C117S932000

Reexamination Certificate

active

07442251

ABSTRACT:
This method for producing silicon single crystals includes: growing a silicon single crystal by the Czochralski method while cooling at least part of the silicon single crystal under growth with a cooling member which circumferentially surrounds the silicon single crystal and has an inner contour that is coaxial with a pull axis, wherein an ambient gas in which the silicon single crystal is grown includes a hydrogen-atom-containing substance in gaseous form. This silicon single crystal is produced by the above method.

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