Epitaxial oxides on amorphous SiO.sub.2 on single crystal silico

Details Epitaxial oxides on amorphous SiO.sub.2 on single crystal silico Epitaxial oxides on amorphous SiO.sub.2 on single crystal silico

1996-12-05

1999-06-15

Sergent, Rabon

Stock material or miscellaneous articles

Structurally defined web or sheet

Discontinuous or differential coating, impregnation or bond

257636, 257644, 257646, 257650, 4273762, 4273763, 4273766, 4273767, 4273833, 428216, 428336, 428446, 428697, 428699, 428701, 428702, 428481, 428762, 428770, 428787, B32B 904, H01L 2358, H01L 21324, B05D 302

Patent

active

059120681

ABSTRACT:
A process for forming a structure including an epitaxial layer of a oxide material such as yttria-stabilized zirconia on a thick layer of amorphous silicon dioxide having a thickness of at least about 500 Angstroms on a single crystal silicon substrate and the resultant structures derived therefrom are provided.

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