Fabrication of array pH sensitive EGFET and its readout circuit

Details Fabrication of array pH sensitive EGFET and its readout circuit Fabrication of array pH sensitive EGFET and its readout circuit

2006-01-26

2008-10-14

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S049000, C438S051000, C257S252000, C257S253000

Reexamination Certificate

active

07435610

ABSTRACT:
A method for fabricating an array pH sensor and a readout circuit device of such array pH sensor are implemented by utilizing an extended ion sensitive field effect transistor to construct the array pH sensor and related readout circuit. The structure of the array sensor having this extended ion sensitive field effect transistor comprises a tin dioxide/metal/silicon dioxide multi-layer structure sensor and a tin dioxide/indium tin oxide/glass multi-layer structure sensor and has excellent properties. Furthermore, the readout circuit and the sensor utilize two signal generators for controlling and reading signals. In particular, the sensor can be effective for increasing the accuracy of measurement and reducing the interference of noise.

REFERENCES:
patent: 6414292 (2002-07-01), Afghahi
patent: 6703241 (2004-03-01), Sunshine et al.

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