Method of manufacturing a group II-VI compound semiconductor dev

Details Method of manufacturing a group II-VI compound semiconductor dev Method of manufacturing a group II-VI compound semiconductor dev

1984-07-31

1987-08-11

Ozaki, George T.

Fishing, trapping, and vermin destroying

437905, H01L 21388

Patent

active

046859799

ABSTRACT:
A method of manufacturing a semiconductor device having a single crystal pn junction formed in a Group II-VI compound semiconductor crystal, by: growing a Group II-VI compound semiconductor crystal substrate of n type from a melt of a crystal-constituting Group VI element other than Te; forming a crystal temperature difference in the melt which applying a vapor pressure of the Group VI element onto the melt; forming, on the substrate, a semiconductor region of p type by diffusing an acceptor impurity into the n type crystal under a predetermined vapor pressure of the constituent Group VI element. Thus, it becomes possible to provide light-emitting diodes emitting green, blue-green or violet color region if ZnSe crystals are used.

REFERENCES:
patent: 3549434 (1970-12-01), Aven
patent: 3578507 (1971-05-01), Chiang et al.
patent: 3615877 (1971-10-01), Yamashita
patent: 3670220 (1972-06-01), Kun et al.
patent: 3745073 (1973-07-01), Kun et al.
patent: 3870473 (1975-03-01), Kyle
patent: 4190486 (1980-02-01), Kyle
patent: 4389256 (1983-06-01), Nishizawa et al.
patent: 4465527 (1984-08-01), Nishizawa
patent: 4526632 (1985-07-01), Nishizawa et al.
Washiyama et al, Electronic Materials EFM-78-12, The Institute of Electrical Engineers of Japan, Tokyo, Japan, Nov. 29, 1978, pp. 1-9, (translated).
Hamilton, P. M., SCP and Solid State Technology, "Advances in III-V and III-VI Semiconductor Compounds", Jun. 1964, pp. 15-19.

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