Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-05-27

2008-10-07

Kebede, Brook (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S296000, C257S774000, C257SE23145, C257SE23151, C257SE23175, C257S303000, C257SE23142, C257SE23143

Reexamination Certificate

active

07432597

ABSTRACT:
In a semiconductor device including a memory region and a logic region, one or more of a plurality of logic transistor connection plugs, buried in a first insulating layer and connected to a diffusion layer of a logic transistor, are left unconnected to a first interconnect provided in an upper layer.

REFERENCES:
patent: 6130449 (2000-10-01), Matsuoka et al.
patent: 6258649 (2001-07-01), Nakamura et al.
patent: 6461911 (2002-10-01), Ahn et al.
patent: 2002/0024140 (2002-02-01), Nakajima et al.
patent: 2002/0195632 (2002-12-01), Inoue et al.
patent: 2003/0134490 (2003-07-01), Inuzuka
patent: 2002-289817 (2002-10-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4012481