Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...
Reexamination Certificate
2006-02-03
2008-08-26
Cao, Phat X (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Having only two terminals and no control electrode , e.g.,...
C257S484000, C257SE27051
Reexamination Certificate
active
07417265
ABSTRACT:
In one embodiment, a Schottky diode structure comprises a Schottky barrier layer in contact with a semiconductor material through a Schottky contact opening. A conductive ring is formed adjacent the Schottky contact opening and is separated from the semiconductor material by a thin insulating layer. Another insulating layer is formed overlying the structure, and a contact opening is formed therein. The contact opening is wider than the Schottky contact opening and exposes portions of the conductive ring. A Schottky barrier metal is formed in contact with the semiconductor material through the Schottky contact opening, and is formed in further+contact with the conductive ring.
REFERENCES:
patent: 7019377 (2006-03-01), Tsuchiko
patent: 2005/0077590 (2005-04-01), Swanson et al.
“Device Electronics For Integrated Circuits”, Richard S. Muller and Theodore I. Kamins, John Wiley & Sons, copyright 1977, pp. 95-99.
Cao Phat X
Jackson Kevin B.
Semiconductor Components Industries L.L.C.
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