Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Reexamination Certificate
2004-12-27
2008-08-12
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
C438S457000, C356S399000
Reexamination Certificate
active
07410880
ABSTRACT:
In a method for measuring the bonding quality of bonded substrates, such as bonded SOI wafers, a plurality of marks are created at a first side of a top substrate after, or before, the bonding of the top substrate onto a bottom substrate. Then, the positions of the plurality of marks are measured using a metrology tool. Next, for each of the marks, a difference between a measured position and an expected position is calculated. These differences can be used to determine delamination between the top substrate and the bottom substrate. By displaying a vector field representing the differences, and by not showing vectors that exceed a certain threshold, the delamination areas can be made visible.
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Best Keith Frank
Consolini Joseph J.
Friz Alexander
ASML Netherlands B.V.
Coleman W. David
Nguyen Khiem D
Pillsbury Winthrop Shaw & Pittman LLP
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