Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2005-11-03
2008-10-28
Doan, Theresa T (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S103000
Reexamination Certificate
active
07442962
ABSTRACT:
A GaN-based LED structure is provided so that the brightness and lighting efficiency of the GaN-based LED are enhanced effectively. The greatest difference between the GaN-based LEDs according to the invention and the prior arts lies in the addition of a thin layer on top of the traditional structure. The thin layer could be formed using silicon-nitride (SiN), or it could have a superlattice structure either made of layers of SiN and undoped indium-gallium-nitride (InGaN), or made of layers SiN and undoped aluminum-gallium-indium-nitride (AlGaInN), respectively. Because of the use of SiN in the thin layer, the surfaces of the GaN-based LEDs would be micro-roughened, and the total internal reflection resulted from the GaN-based LEDs' higher index of refraction than the atmosphere could be avoided.
REFERENCES:
patent: 7180097 (2007-02-01), Wu et al.
patent: 10-2004-53392 (2004-07-01), None
Chien Fen-Ren
Wu Liang-Wen
Doan Theresa T
Formosa Epitaxy Incorporation
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