Method for manufacturing ferroelectric memory device

Details Method for manufacturing ferroelectric memory device Method for manufacturing ferroelectric memory device

2007-04-16

2008-08-05

Arani, Taghi T. (Department: 4193)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S003000, C438S397000, C438S398000, C438S399000, C438S665000

Reexamination Certificate

active

07407862

ABSTRACT:
A method for manufacturing a ferroelectric memory device includes the steps of forming an active element on a substrate; forming an interlayer dielectric film on the substrate; forming a contact hole in the interlayer dielectric film; forming, in the contact hole, a contact plug that conductively connects to the active element; reacting trimethyl aluminum with the contact plug; applying an oxidation treatment to the contact plug reacted with the trimethyl aluminum; applying an ammonium plasma treatment to the contact plug treated with the oxidation treatment; forming a film of conductive material having a self-orientation property to form a conductive layer on the contact plug treated with the ammonium plasma treatment; and laminating a first electrode, a ferroelectric layer and a second electrode above the conductive layer.

REFERENCES:
patent: 2000-277701 (2000-10-01), None

Affiliated with

Also associated with

Rating

Method for manufacturing ferroelectric memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing ferroelectric memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing ferroelectric memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4011172