Method and apparatus for determining the quality of a semiconduc

Details Method and apparatus for determining the quality of a semiconduc Method and apparatus for determining the quality of a semiconduc

1980-09-22

1982-09-28

Smith, Alfred E.

Radiant energy

Invisible radiant energy responsive electric signalling

With means to inspect passive solid objects

250370, 250372, G01N 2300, G01T 122, G01J 142

Patent

active

043520162

ABSTRACT:
The surface quality of a semiconductor material is determined by exposing the semiconductor surface to two light beams of different wavelengths or wavelength ranges (e.g. ultraviolet and near ultraviolet). A portion of each of the respective light beams is reflected from the semiconductor surface. The intensity of each reflected beam is measured to obtain an intensity difference whereby the mangitude of the difference is a measure of the quality of the semiconductor material.

REFERENCES:
patent: 3451254 (1969-06-01), Maley
patent: 4211488 (1980-07-01), Kleinknecht
Zanzucchi, P. J., & Duffy, M. T., "Surface Damage and the Optical Reflectance of Single-Crystal Silicon", Applied Optics, vol. 17, No. 21, pp. 3477-3481.
Philipp, H. R. & Taft, E. A., "Optical Constants of Silicon in the Region 1-10 ev", _Physical Review, vol. 120, No. 1, Oct. 1, 1960, pp. 37-38.

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