Soi wafer and a method for producing the same

Details Soi wafer and a method for producing the same Soi wafer and a method for producing the same

2004-01-22

2008-08-05

Schillinger, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S149000, C257S347000, C117S013000

Reexamination Certificate

active

07407866

ABSTRACT:
An SOI wafer in which a base wafer and a bond wafer respectively consisting of silicon single crystal are bonded via an oxide film, and then the bond wafer is thinned to form a silicon active layer, wherein the base wafer is formed of silicon single crystal grown by Czochralski method, and the whole surface of the base wafer is within N region outside OSF region and doesn't include a defect region detected by Cu deposition method, or the whole surface of the base wafer is within a region outside OSF region, doesn't include a defect region detected by Cu deposition method, and includes I region containing dislocation cluster due to interstitial silicon. Thereby, there is provided an SOI wafer that retains high insulating properties and has an excellent electrical reliability in device fabrication even in the case of forming an extremely thin interlevel dielectric oxide film with, for example, a thickness of 100 nm or less.

REFERENCES:
patent: 5037503 (1991-08-01), Kajimoto et al.
patent: 5238875 (1993-08-01), Ogino
patent: RE35242 (1996-05-01), Kajimoto et al.
patent: 5728211 (1998-03-01), Takano et al.
patent: 6174364 (2001-01-01), Yamanaka et al.
patent: 6190452 (2001-02-01), Sakurada et al.
patent: 6284629 (2001-09-01), Yokokawa et al.
patent: 6313014 (2001-11-01), Sakaguchi et al.
patent: 6482260 (2002-11-01), Sakurada et al.
patent: 6565822 (2003-05-01), Hoshi et al.
patent: 6893499 (2005-05-01), Fusegawa et al.
patent: 6913646 (2005-07-01), Sakurada et al.
patent: 7091107 (2006-08-01), Yokokawa et al.
patent: 7129123 (2006-10-01), Sakurada et al.
patent: 7214268 (2007-05-01), Sakurada et al.
patent: 7226507 (2007-06-01), Mitamura et al.
patent: 7258744 (2007-08-01), Sakurada et al.
patent: 7294196 (2007-11-01), Sakurada et al.
patent: 7311888 (2007-12-01), Takeno et al.
patent: 7323048 (2008-01-01), Sakurada et al.
patent: 2001/0000093 (2001-04-01), Sakurada et al.
patent: 2003/0106484 (2003-06-01), Fusegawa et al.
patent: 2003/0116082 (2003-06-01), Sakurada et al.
patent: 2004/0166650 (2004-08-01), Yokokawa et al.
patent: 2005/0064632 (2005-03-01), Sakurada et al.
patent: 2005/0205004 (2005-09-01), Sakurada et al.
patent: 2005/0252441 (2005-11-01), Sakurada et al.
patent: 2006/0065184 (2006-03-01), Sakurada et al.
patent: 2006/0075957 (2006-04-01), Takeno et al.
patent: 2006/0086313 (2006-04-01), Sakurada
patent: 2006/0113594 (2006-06-01), Sakurada et al.
patent: 2006/0130740 (2006-06-01), Sakurada
patent: 2006/0174819 (2006-08-01), Mitamura et al.
patent: 2007/0017433 (2007-01-01), Sakurada et al.
patent: 2008/0035050 (2008-02-01), Sakurada
patent: 971395 (2000-01-01), None
patent: 1 170 405 (2002-01-01), None
patent: 1 347 083 (2003-09-01), None
patent: A 11-040786 (1999-02-01), None
patent: A 11-297583 (1999-10-01), None
patent: A 2000-030995 (2000-01-01), None
patent: A 2000-294470 (2000-10-01), None
patent: A 2001-044398 (2001-02-01), None
patent: A 2001-146498 (2001-05-01), None
patent: 2002201093 (2002-07-01), None
patent: A 2002-201093 (2002-07-01), None
patent: WO 00/62343 (2000-10-01), None
patent: WO 01/36719 (2001-05-01), None
patent: WO 02/053812 (2002-07-01), None
patent: WO 2004066390 (2004-08-01), None

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