Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2006-06-07
2008-08-05
Baumeister, Bradley W. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257SE51029, C549S083000
Reexamination Certificate
active
07408188
ABSTRACT:
An organic semiconductor material characterized by having a structure represented by chemical formula 1, the planarity of a main chain A1-X-A2 being disintegrated by steric hindrance between B1 and X and steric hindrance between B2 and X, the organic semiconductor material having a number average molecular weight of about 2,000 to about 200,000:wherein A1, A2, B1, B2 and X each have a skeleton structure comprising L 6 π electron rings, M 8 π electron rings, N 10 π electron rings, O 12 π electron rings, P 14 π electron rings, Q 16 π electron rings, R 18 π electron rings, S 20 π electron rings, T 22 π electron rings, U 24 π electron rings, and V 26 π electron rings, wherein L, M, N, O, P, Q, R, S, T, U, and V are each an integer of 0 (zero) to 6 and L+M+N+O+P+Q+R+S+T+U+V=1 to 6; and B1 and B2 have an alkyl group.
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de Oliveira, M.A., et al., “Structure an Electronic Prooperties of Alkylthiophenes Coupled by Head-to-Tail and Head-to-Head Regioselectivity”, J. Braz.Chem.Soc., vol. 15, No. 6 832-838, 2004.□□
Maeda Hiroki
Matsuoka Masanao
Sugawara Shigeru
Tomino Ken
Baumeister Bradley W.
Burr & Brown
Dai Nippon Printing Co. Ltd.
Such Matthew W
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