Coating apparatus – Gas or vapor deposition – With treating means
Reexamination Certificate
2002-05-15
2008-08-26
Hassanzadeh, Parviz (Department: 1792)
Coating apparatus
Gas or vapor deposition
With treating means
C156S345430, C156S345440, C156S345470, C315S111210
Reexamination Certificate
active
07415940
ABSTRACT:
This invention includes a first filter (27) connected between a susceptor (21) and ground and having a variable impedance, a sensor (28) for detecting an electrical signal based on the state of a plasma (P) generated in a process chamber (11), and a control means (36) for controlling the impedance of the first filter (27) on the basis of a detection result output from the sensor (28). Thus, a preferable plasma distribution to match the object of the plasma process can be realized.
REFERENCES:
patent: 5288971 (1994-02-01), Knipp
patent: 6051073 (2000-04-01), Chu et al.
patent: 6136388 (2000-10-01), Raoux et al.
patent: 6447691 (2002-09-01), Denda et al.
patent: 2001/0025691 (2001-10-01), Kanno et al.
patent: 2001/0050058 (2001-12-01), Yamamoto et al.
patent: 0641159 (1997-08-01), None
patent: 10-321598 (1998-12-01), None
Koshimizu Chishio
Yamazawa Yohei
Crowell & Moring LLP
Dhingra Rakesh K
Hassanzadeh Parviz
Tokyo Electron Limited
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