Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2005-12-01
2008-10-14
Williams, Alexander O (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257SE23011, C257SE25013, C257SE27112, C257SE27093, C257S758000, C257S528000, C257S532000, C257S302000, C257S306000, C257S334000, C257S332000, C257S307000, C257S309000, C257S680000
Reexamination Certificate
active
07436069
ABSTRACT:
The layout density of the through electrodes in the horizontal plane of the substrate is enhanced. Through holes103extending through the silicon substrate101is provided. An insulating film105is buried within the through hole103. A plurality of columnar through plugs107are provided in the insulating film105.
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NEC Electronics Corporation
Williams Alexander O
Young & Thompson
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