Semiconductor device, having a through electrode...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

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Details

C257SE23011, C257SE25013, C257SE27112, C257SE27093, C257S758000, C257S528000, C257S532000, C257S302000, C257S306000, C257S334000, C257S332000, C257S307000, C257S309000, C257S680000

Reexamination Certificate

active

07436069

ABSTRACT:
The layout density of the through electrodes in the horizontal plane of the substrate is enhanced. Through holes103extending through the silicon substrate101is provided. An insulating film105is buried within the through hole103. A plurality of columnar through plugs107are provided in the insulating film105.

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