Pixel circuit with surface doped region between multiple...

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Reexamination Certificate

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Details

C250S214100, C250S2140RC, C257S239000, C348S294000, C348S308000

Reexamination Certificate

active

07414233

ABSTRACT:
A pixel circuit of an image sensor includes a photo-converting unit such as a photo-diode for generating charge from incident light. The pixel circuit also includes a charge storing capacitor for storing the charge generated by the photo-converting unit. The pixel circuit further includes a floating diffusion node that receives the charge from the charge storing unit after being reset. Thus, an image signal VSIG is generated after a reset signal VRES is generated from the pixel circuit.

REFERENCES:
patent: 6731335 (2004-05-01), Kim et al.
patent: 2005/0110093 (2005-05-01), Altice et al.
patent: 2006/0044437 (2006-03-01), Shah
patent: 2006/0046338 (2006-03-01), Patrick et al.
Korean Patent Application No. 1019990061270 to Min, having Publication date of Jul. 5, 2001 (w/ English Abstract page).
Japanese Patent Application No. 2003-044997 to Shoji et al., having Publication date of Sep. 9, 2004 (w/ English Abstract page).
Japanese Patent Application No. 07-197471 to Hidekazu, having Publication date of Feb. 14, 1997 (w/ English Abstract page).

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