Thin film thickness measurements and depth profiling utilizing a

Details Thin film thickness measurements and depth profiling utilizing a Thin film thickness measurements and depth profiling utilizing a

1982-06-18

1985-04-23

Yasich, Daniel M.

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73606, 73643, 364578, 374 4, 374 7, 374134, G01N 2500, G01N 2904, G06F 1500

Patent

active

045133840

ABSTRACT:
The subject invention discloses a method for non-destructively determining the thickness of layers deposited on a substrate by analyzing thermal waves generated in a sample. The methods are particularly suited for use with integrated circuit manufacturing. In the subject method, the sample is subjected to a focused periodic heat source which generates thermal waves. Either the magnitude or phase of the thermal waves generated in the sample are measured. The values obtained are normalized relative to a reference sample. The normalized values are analyzed with respect to a theoretical model of the sample to calculate the thickness of the unknown layers. In an alternate embodiment, thermal characteristics can be determined in a sample as a function of depth. The latter approach is useful for nondestructively determining dopant concentrations or lattice defects in semiconductor devices as a function of depth beneath the surface.

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