Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond
Reexamination Certificate
2006-03-14
2008-08-26
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Ball or nail head type contact, lead, or bond
C257S737000, C257S738000, C257S759000, C257S780000, C257SE23020
Reexamination Certificate
active
07417326
ABSTRACT:
A semiconductor device includes a plurality of electrode layers provided at designated positions of a semiconductor substrate, an organic insulation film formed on the semiconductor substrate by selectively exposing designated areas of the electrode layers, and projection electrodes for outside connection, the projection electrodes being formed on the designated areas of the electrode layers. Thickness of the organic insulation film situated in the vicinity of the periphery of the projection electrodes is greater than thickness of the organic insulation film situated between the projection electrodes.
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Korean Office Action dated Jul. 18, 2007 issued in corresponding Application No. 10-2006-0030781.
Ikumo Masamitsu
Watanabe Eiji
Yoda Hiroyuki
Fujitsu Limited
Mandala, Jr. Victor A
Pert Evan
Westerman, Hattori, Daniels & Adrian , LLP.
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