Insulated gate semiconductor device and manufacturing method...

Details Insulated gate semiconductor device and manufacturing method... Insulated gate semiconductor device and manufacturing method...

2006-08-01

2008-08-26

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S779000, C257S782000, C257S784000

Reexamination Certificate

active

07417295

ABSTRACT:
Two metal electrode layers are provided. A first electrode layer is patterned with a minute separation distance according to an element region as in the case of the conventional case. Meanwhile, it suffices that a second electrode layer be in contact with the first electrode layer. Thus, no problems arise even if the separation distance is elongated. Specifically, the second electrode layer can be set to have a desired thickness. Moreover, by disposing a nitride film on the first electrode layer below a wire bonding region, even when volume expansion is caused by an Au/Al eutectic layer, transmission of stress to the element region can be prevented.

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Korean Office Action dated Jun. 22, 2006, directed to counterpart KR application No. 10-2006-0070114.

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