Thin film splitting method

Details Thin film splitting method Thin film splitting method

2006-05-19

2008-10-21

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S162000, C438S373000, C438S422000, C438S456000, C438S480000, C257SE21319

Reexamination Certificate

active

07439092

ABSTRACT:
A method of fabricating thin films of semiconductor materials by implanting ions in a substrate composed of at least two different elements at least one of which can form a gaseous phase on bonding with itself and/or with impurities includes the following steps:(1) bombarding one face of the substrate with ions of a non-gaseous heavy species in order to implant those ions in a concentration sufficient to create in the substrate a layer of microcavities containing a gaseous phase formed by the element of the substrate;(2) bringing this face of the substrate into intimate contact with a stiffener; and(3) obtaining cleavage at the level of the microcavity layer by the application of heat treatment and/or a splitting stress.

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