Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-07-14
2008-08-12
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S738000
Reexamination Certificate
active
07410906
ABSTRACT:
A method of producing a functional device comprising an electrode layer provided as an upper layer of a layer containing an organic material, the layer being as a functional layer, wherein a step of patterning the electrode layer comprises a high speed etching step of etching the electrode layer at a rate of 10 nm/min or more.
REFERENCES:
patent: 5318664 (1994-06-01), Saia et al.
patent: 5366588 (1994-11-01), Scholten et al.
patent: 5793047 (1998-08-01), Kobayashi et al.
patent: 6235641 (2001-05-01), Christenson
patent: 6407004 (2002-06-01), Kimura et al.
patent: 2001/0036680 (2001-11-01), Higashi et al.
patent: 2002/0079802 (2002-06-01), Inoue et al.
patent: 2003/0141807 (2003-07-01), Kawase
FUJIFILM Corporation
Pert Evan
Sandvik Ben P
Sughrue & Mion, PLLC
LandOfFree
Functional device and method for producing the same, and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Functional device and method for producing the same, and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Functional device and method for producing the same, and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4000879