Method of manufacturing silicon monocrystal, and seed crystal us

Details Method of manufacturing silicon monocrystal, and seed crystal us Method of manufacturing silicon monocrystal, and seed crystal us

1998-01-15

1999-06-15

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117911, C30B 1532

Patent

active

059118229

ABSTRACT:
In a method of manufacturing a silicon monocrystal using the Czochralski method, there is used a seed crystal whose tip end has a sharp-pointed shape or a truncation thereof. The tip end of the seed crystal is gently brought into contact with the silicon melt, and the seed crystal is then lowered at a low speed in order to melt the tip end portion of the seed crystal until the size of the tip portion increases to a desired value. Subsequently, the seed crystal is slowly pulled upwardly in order to grow a silicon monocrystalline ingot having a desired diameter without performing necking operation. This method enables a heavy silicon monocrystal to be pulled quite simply without performance of necking operation, while eliminating the necessity of using a complicated apparatus such as a crystal holding mechanism.

REFERENCES:
patent: 5487355 (1996-01-01), Chiou et al.

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