Method of holding a monocrystal, and method of growing the same

Details Method of holding a monocrystal, and method of growing the same Method of holding a monocrystal, and method of growing the same

1997-09-05

1999-06-15

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117208, 117218, 117911, C30B 1504

Patent

active

059118210

ABSTRACT:
There is disclosed a Czochralski method in which a seed crystal in contact with material melt is pulled, while being rotated, so as to grow a monocrystal, and a part of the crystal being grown is mechanically held during the pulling operation. The crystal is mechanically held in such a way that the weight W(kg) of the crystal satisfies the following Formula (1):

REFERENCES:
patent: 4190630 (1980-02-01), Apilat et al.
patent: 5126113 (1992-06-01), Yamagishi et al.
patent: 5196086 (1993-03-01), Kida et al.
patent: 5487355 (1996-01-01), Chiou et al.
K. M. Kim et al., "Maximum Length of Large Diameter Czochralski Silicon Single Crystals at Fracture Stress Limit of Seed," Journal of Crystal Growth, vol. 100, No. 3, Mar. 1, 1990, pp. 527-528.

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