Apparatus for the continuous production of silicon oxide powder

Details Apparatus for the continuous production of silicon oxide powder Apparatus for the continuous production of silicon oxide powder

2004-02-24

2008-10-07

Bhat, N. (Department: 1797)

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including heat exchanger for reaction chamber or reactants...

C422S254000, C422S232000, C423S325000, C423S326000, C423S335000, C423S336000

Reexamination Certificate

active

07431899

ABSTRACT:
A silicon oxide powder can be continuously prepared by feeding a raw material powder mixture containing silicon dioxide powder into a reaction chamber (2) at a temperature of 1,100-1,600° C., to produce a silicon oxide gas, transferring the silicon oxide gas to a deposition chamber (11) through a transfer conduit (10) maintained at a temperature of from higher than 1,000° C. to 1,300° C., causing silicon oxide to deposit on a substrate (13) which is disposed and cooled in the deposition chamber, scraping the silicon oxide deposit, and recovering the deposit in a recovery chamber (18). The method and apparatus is capable of continuous and stable production of amorphous silicon oxide powder of high purity.

REFERENCES:
patent: 5096685 (1992-03-01), Funahashi et al.
patent: 5244639 (1993-09-01), Aratani et al.
patent: 63-103815 (1988-05-01), None
patent: 63103815 (1988-05-01), None
patent: 40-22050 (1992-01-01), None
patent: 62-27318 (1994-08-01), None
patent: 09-025112 (1997-01-01), None
patent: 9-110412 (1997-04-01), None
patent: 09110412 (1997-04-01), None
English Abstract for Japan 09-025112.
Applicants' foreign representative's description of JP-B 40-22050.
English Abstract for Japan 9-110412.
English Abstract for Japan 63-103815.

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