Semiconductor light-emitting device and method for...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

Reexamination Certificate

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C257S081000, C257S099000, C257SE33074, C257SE33067

Reexamination Certificate

active

07439552

ABSTRACT:
A semiconductor light-emitting device includes a light-emitting layer and a light extraction layer formed on the light-emitting layer and made of a resin material containing particles. The maximum size of each of the particles contained in the light extraction layer is smaller than the wavelength of emitted light penetrating through the light extraction layer.

REFERENCES:
patent: 2001/0033135 (2001-10-01), Duggal et al.
patent: 2003/0227249 (2003-12-01), Mueller et al.
patent: 2005/0194605 (2005-09-01), Shelton et al.
patent: 59-050401 (1984-03-01), None
patent: 08-110401 (1996-04-01), None
patent: 2005-005679 (2005-01-01), None

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