Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-12-22
2008-10-28
Mai, Son L (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S230060
Reexamination Certificate
active
07443735
ABSTRACT:
Reducing wordline recovery time for a wordline having a wordline capacitance CWLby configuring the wordline capacitance CWLand a load capacitance CLin a series configuration with respect to a first node. Supplying a charging current at a first node from a charge pump having an initial low voltage output voltage.
REFERENCES:
patent: 5073731 (1991-12-01), Oh
patent: 5633827 (1997-05-01), Numata et al.
patent: 5940333 (1999-08-01), Chung
patent: 6075746 (2000-06-01), Ohsawa
patent: 6259635 (2001-07-01), Khouri et al.
patent: 6445623 (2002-09-01), Zhang et al.
patent: 6909318 (2005-06-01), Du et al.
patent: 2001/0050878 (2001-12-01), Yanagisawa
patent: 2005/0184795 (2005-08-01), Koshita
International Search Report dated Apr. 22, 2008 from PCT Application No. PCT/US2007/087303.
Written Opinion dated Apr. 22, 2008 from PCT Application No. PCT/US2007/087303.
Beyer Law Group LLP
Mai Son L
SanDisk Corporation
LandOfFree
Method of reducing wordline recovery time does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of reducing wordline recovery time, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of reducing wordline recovery time will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3998535