Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2006-02-20

2008-08-12

Nguyen, Dung T (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S046010

Reexamination Certificate

active

07411988

ABSTRACT:
In various aspects, a semiconductor light emitting device provided between a first edge and a second edge opposite to the first edge and emitting laser from the first edge, may include: a first clad layer of a first conductivity type having a nitride semiconductor; an active layer provided on the first clad layer and having a nitride semiconductor; a second clad layer of a second conductivity type provided on the active layer having a nitride semiconductor and a ridge waveguide, the ridge waveguide having an activation region and a first edge region which is adjacent to the activation region and is extended from the first edge in a direction from the first edge to the second edge; an upper electrode provided on the ridge waveguide in the activation region; and a dielectric layer provided on a side surface of the ridge waveguide in the activation region, wherein the ridge waveguide in the first edge region has a lower activation ratio of a second conductivity type impurity than the ridge waveguide in the activation region.

REFERENCES:
patent: 2004/0191938 (2004-09-01), Ueda et al.
patent: 2005/0281304 (2005-12-01), Mochida
patent: 2006/0165143 (2006-07-01), Ohno
patent: 09-129929 (1999-04-01), None
patent: 2002164617 (2002-06-01), None
patent: 2002270957 (2002-09-01), None
patent: 2004048079 (2004-02-01), None
patent: 2919788 (2006-02-01), None

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