System, method and a program for correcting conditions for...

Details System, method and a program for correcting conditions for... System, method and a program for correcting conditions for...

2005-09-30

2008-10-14

Berman, Jack I. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492100, C250S492200, C250S492210, C250S492300, C702S085000, C702S094000

Reexamination Certificate

active

07435978

ABSTRACT:
A system for correcting a charged particle beam lithography condition including: an error calculation unit configured to calculate an error in an illumination position of a charged particle beam, the charged particle beam is controlled by a lithography condition corrected by initial correction parameters; a temporary correction unit configured to calculate temporary correction parameters to decrease the error to a minimum; and a main correction unit configured to calculate main correction parameters correcting the lithography condition, by executing statistical processing using the temporary correction parameters and the initial correction parameters.

REFERENCES:
patent: 4879473 (1989-11-01), Zumoto et al.
patent: 6657207 (2003-12-01), Kawata et al.
patent: 7-58015 (1995-03-01), None
patent: 7-122536 (1995-05-01), None
patent: 2786660 (1998-05-01), None
patent: 3064375 (2000-05-01), None
patent: 2003-124110 (2003-04-01), None

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