Method to detect and predict metal silicide defects in a...

Details Method to detect and predict metal silicide defects in a... Method to detect and predict metal silicide defects in a...

2005-02-02

2008-10-28

Nguyen, Vinh P (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S754120

Reexamination Certificate

active

07443189

ABSTRACT:
The present teachings provide methods for detection of metal silicide defects in a microelectronic device. In an exemplary embodiment, a portion of a semiconductor substrate may be positioned in a field of view of an inspection tool. The method also includes producing (120) a voltage contrast image of the portion, wherein the image is obtained using a collection field that is stronger than an incident field. The method also includes using (130) the voltage contrast image to determine a metal silicide defect in a microelectronic device. Other embodiments include an inspection system (200) for detecting metal silicide defects and a method of manufacturing an integrated circuit (300).

REFERENCES:
patent: 5799104 (1998-08-01), Nakamura et al.
patent: 6232787 (2001-05-01), Lo et al.
patent: 6252412 (2001-06-01), Talbot et al.
Jenkins et al. “Analysis of Silicide Process Defects by Non-contact Electron Beam Charging”,30th Annual Proceedings Reliability Physics 1992,IEEE Catalog No. 92CH3084-1;pp. 304-308.

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