Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-11-07
2008-08-26
Nguyen, Tuan T (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185250, C365S230040
Reexamination Certificate
active
07417899
ABSTRACT:
A method of verifying a flash memory device includes discharging memory cell strings respectively connected to an even bit line and an odd bit line. Next, a voltage is applied to the memory cell strings respectively connected to the even bit line and the odd bit line, thus precharging the memory cell strings. The memory cell string connected to the even bit line are verified as erased by sensing the status of each memory cell string connected to the even bit line, and the memory cell string connected to the odd bit line are verified as erased by sensing the status of the memory cell string connected to the odd bit line.
REFERENCES:
patent: 6049492 (2000-04-01), Vogelsang et al.
patent: 7072225 (2006-07-01), Takase et al.
patent: 7095657 (2006-08-01), Takase et al.
patent: 7180784 (2007-02-01), Ju
patent: 7257027 (2007-08-01), Park
patent: 09-180483 (1995-12-01), None
patent: 2002-279788 (2002-09-01), None
patent: 10-0224275 (1999-07-01), None
patent: 1999-0075686 (1999-10-01), None
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
Nguyen Tuan T
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