Semiconductor strain sensor

Details Semiconductor strain sensor Semiconductor strain sensor

1992-05-04

1994-07-12

Lateef, Marvin M.

Electrical resistors

Strain gauge type

Fluid- or gas pressure-actuated

338 5, 338 36, 338 42, G01L 122

Patent

active

053292715

ABSTRACT:
A semiconductor strain sensor includes a silicon substrate, a strain resistive element and electrodes. The silicon substrate has a deformable portion which is deformed when stress is applied to it. The strain resistive element is formed on the deformable portion and has an at least a first layer and a second layer which form a heterojunction between them. The first layer is doped with impurities so that a two-dimensional carrier gas layer is formed in the second layer near the heterojunction. The two-dimensional carrier gas layer has carriers originating from the impurities. The electrodes electrically contact the two dimensional carrier gas layer. Change of resistance of the strain resistive element in accordance with the stress is detected through the electrodes.

REFERENCES:
patent: 4965697 (1990-10-01), Mosser et al.
patent: 4967597 (1990-11-01), Yamada et al.
"Piezoresistance Effect in Selectively Doped Structure" Kato, Takatoshi et al. ED88-18, P51-56 (1988) Published in 1988.
"Piezoresistance Effect in n-type and p-type A10,3 GaO,7 As/GaAS Selectively Doped Heterostructure Kato", T. et al. pp. 139-142, published 1987.

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