Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2006-08-07
2008-10-28
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S022000, C257SE27001, C257SE27116, C349S001000
Reexamination Certificate
active
07442566
ABSTRACT:
On a glass substrate, gate bus lines, data bus lines, and TFTs are formed. Then, on the substrate, an insulating film, covering the gate bus lines, data bus lines and TFTs, is formed, and a positive type photoresist film is further formed thereon. Next, through exposure and development processes, the resist film is divided for each picture element and subjected to ultraviolet ray irradiation to harden only a surface layer thereof. Then, the resist film is subjected to heat treatment to form thereon wrinkle-form surface ruggedness of a uniform pattern, which is determined depending on the size of the resist film. Subsequently, reflection electrodes are formed on the resist film. The reflection electrodes are formed to overlap the gate bus line, data bus line and TFTs, and the regions between the adjacent reflection electrodes serve as light transmission regions.
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Koike Yoshio
Ohmuro Katsufumi
Sugiura Norio
Tashiro Kunihiro
Greer Burns & Crain Ltd.
Lindsay, Jr. Walter
Mustapha Abdulfattah
Sharp Kabushiki Kaisha
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