Non-volatile semiconductor memory device and operating...

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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C365S185010, C365S200000, C365S201000, C714S025000, C714S048000

Reexamination Certificate

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07423904

ABSTRACT:
A non-volatile semiconductor memory device includes a memory cell array having a plurality of electrically-programmable non-volatile memory cells; a byte scan section detecting errors of said non-volatile memory cells per byte and outputting a status of pseudo-pass even though a number of byte errors are equal to or less than a predetermined allowable number of bytes; and a bit scan section detecting bit errors of said non-volatile memory cells per bit at the time of said status of said pseudo-pass being outputted by said byte scan part, and outputting a status of pseudo-pass even though said number of said bit errors are equal to or less than a predetermined allowable number of bits.

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patent: 2004-95145 (2004-03-01), None
patent: 2006-79695 (2006-03-01), None
patent: 2006-134476 (2006-05-01), None
U.S. Appl. No. 11/538,689, filed Oct. 4, 2006, Kojima.

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