Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2006-10-04
2008-09-09
Elms, Richard T. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185010, C365S200000, C365S201000, C714S025000, C714S048000
Reexamination Certificate
active
07423904
ABSTRACT:
A non-volatile semiconductor memory device includes a memory cell array having a plurality of electrically-programmable non-volatile memory cells; a byte scan section detecting errors of said non-volatile memory cells per byte and outputting a status of pseudo-pass even though a number of byte errors are equal to or less than a predetermined allowable number of bytes; and a bit scan section detecting bit errors of said non-volatile memory cells per bit at the time of said status of said pseudo-pass being outputted by said byte scan part, and outputting a status of pseudo-pass even though said number of said bit errors are equal to or less than a predetermined allowable number of bits.
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U.S. Appl. No. 11/538,689, filed Oct. 4, 2006, Kojima.
Elms Richard T.
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Wendler Eric
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