Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2002-08-20
2008-10-14
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S778000, C257S698000, C257SE23069
Reexamination Certificate
active
07436062
ABSTRACT:
An apparatus and method for improving the underfill filling of a semiconductor chip element100which is ultrasonically bonded to and mounted on a circuit board. A semiconductor chip element100includes a silicon chip101and a group of stud bumps117formed on a bottom surface101aof the chip101. Signal stud bumps113are made of gold while power stud bumps114,ground stud bumps115and dummy stud bumps116are all made of a gold-palladium alloy, which are harder than the signal stud bumps113and thus do not deform easily during ultrasonic treatment. Therefore, in a state in which the semiconductor chip element100is mounted, a gap of approximately 30 μm is maintained between the bottom surface101aof the chip100and a top surface of the circuit board120on which the semiconductor chip element100is mounted.
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Baba Shunji
Kainuma Norio
Kira Hidehiko
Okada Toru
Fujitsu Limited
Parekh Nitin
Westerman, Hattori, Daniels & Adrian , LLP.
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