Method of programming memory cell

Details Method of programming memory cell Method of programming memory cell

2007-01-29

2008-10-07

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185280

Reexamination Certificate

active

07433238

ABSTRACT:
A method of programming a memory cell is described. First, a first programming operation is performed to inject electrons into a nitride layer adjacent to a side of a drain. The first programming operation includes applying a first gate voltage to a gate, applying a first drain voltage to the drain, applying a first source voltage to a source, and applying a first substrate voltage to a substrate. Then, a second programming operation is performed to inject the electrons into the nitride layer adjacent to a side of the source. The second programming operation includes applying a second gate voltage to the gate, applying a second drain voltage to the drain, applying a second source voltage to the source, and applying a second substrate voltage to the substrate. The second gate voltage is less than the first gate voltage.

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