Method of fabrication of a AL/GE bonding in a wafer...

Details Method of fabrication of a AL/GE bonding in a wafer... Method of fabrication of a AL/GE bonding in a wafer...

2005-03-18

2008-10-28

Nguyen, Tuan H (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S051000, C438S118000, C438S455000

Reexamination Certificate

active

07442570

ABSTRACT:
A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.

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