Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2005-12-26
2008-09-02
Hiteshew, Felisa C (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S013000, C117S217000, C117S218000, C117S222000
Reexamination Certificate
active
07419545
ABSTRACT:
The present invention provides a producing method with which large silicon carbide (SiC) single crystal can be produced at low cost. Silicon carbide single crystal is produced or grown by dissolving and reacting silicon (Si) and carbon (C) in an alkali metal flux. The alkali metal preferably is lithium (Li). With this method, silicon carbide single crystal can be produced even under low-temperature conditions of 1500° C. or lower, for example. The photograph of FIG.3B is an example of a silicon carbide single crystal obtained by the method of the present invention.
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Kawahara Minoru
Kawamura Fumio
Kitaoka Yasuo
Mori Yusuke
Sasaki Takatomo
Hamre Schumann Mueller & Larson P.C.
Hiteshew Felisa C
Matsushita Electric - Industrial Co., Ltd.
Osaka University
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