Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-07-26
2008-09-30
Andújar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S754000
Reexamination Certificate
active
07429779
ABSTRACT:
A semiconductor device includes a semiconductor substrate having an electrode formed above a surface thereof; a first insulating resin layer that is provided over the semiconductor substrate and has a first opening defined at a position corresponding to the electrode; a first wiring layer that is provided on the first insulating resin layer and is connected to the electrode through the first opening; a second insulating resin layer provided over the first insulating resin layer and the first wiring layer, the second insulating resin layer having a second opening that is defined at a position different from the position of the first opening in a direction of the surface of the semiconductor substrate; and a second wiring layer that is provided on the second insulating resin layer and is connected to the first wiring layer through the second opening, wherein the second wiring layer includes an induction element, and a sum of a thickness of the first insulating resin layer and a thickness of the second insulating resin layer is not less than 5 μm and not more than 60 μm.
REFERENCES:
patent: 6133079 (2000-10-01), Zhu et al.
patent: 6153489 (2000-11-01), Park et al.
patent: 2002/0017730 (2002-02-01), Tahara et al.
patent: 2002/0028557 (2002-03-01), Lee et al.
patent: 2003/0076209 (2003-04-01), Tsai et al.
patent: 2003/0148739 (2003-08-01), Koswmura et al.
patent: 2003-86690 (2003-03-01), None
patent: WO 00/77844 (2000-12-01), None
Wolf et al., Silicon Processing for the VLSI Era, 2000, vol. 1, Lattice Press, 793.
G. J. Carchon et al., “High-Q Above-IC Inductors and Transmission Lines—Comparison to Cu Back-End Performance”, 2004, Electronic Components and Technology Conference. pp. 1118-1123.
P. Pieters, et al., “High-Q Spiral Inductors for High Performance Integrated RF Front-End Sub-Systems”, 2000 International Symposium on Microelectronics.
Official Communication issued on Sep. 17, 2006, together with Australian Search Report, on the counterpart Singapore Patent Application No. 200504595-0.
“New Developments in Incorporating Passive Components for System Integration: Forming an Inductor on a Chip”; Nikkei Microdevices, Mar. 2002, pp. 125-127.
Ito Tatsuya
Itoi Kazuhisa
Sato Masakazu
Andújar Leonardo
Fujikura Ltd.
Westerman, Hattori, Daniels & Adrian , LLP.
LandOfFree
Semiconductor device having gate electrode connection to... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having gate electrode connection to..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having gate electrode connection to... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3987259