Semiconductor laser device and optical information recording...

Details Semiconductor laser device and optical information recording... Semiconductor laser device and optical information recording...

2005-12-16

2008-05-13

Nguyen, Michael Dung (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010

Reexamination Certificate

active

07372885

ABSTRACT:
A semiconductor laser device that offers higher coupling efficiency to a pickup optical system by dramatically reducing the amount of difference between the shape of an FFP in the vertical direction and a Gaussian shape, and that can be produced at lower cost by reducing the operating power needed. The semiconductor laser device is provided with a negative electrode, a GaN substrate, a first n-type clad layer, an n-type light shielding layer that shields light, a second n-type clad layer, an n-type optical waveguide layer, a first carrier stop layer, an active layer, a second carrier stop layer, a p-type optical waveguide layer, a p-type clad layer, a p-type contact layer, and a positive electrode laid in this order.

REFERENCES:
patent: 5604762 (1997-02-01), Morinaga et al.
patent: 2001/0009558 (2001-07-01), Shigihara
patent: 2006/0007976 (2006-01-01), Watanabe et al.
patent: 2000-124552 (2000-04-01), None

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